CC BY
14Методы Монте-Карло и численное статистическое моделирование
57
Список литературы
1. Prigarin S.M., Mironova D.E. Stochastic simulation of peculiarities of laser pulse propagation in clouds and water media, Proc. SPIE 10833, 24th International Symposium on Atmospheric and Ocean Optics: Atmospheric Physics, 108331Z (13 December 2018).
Monte Carlo simulation of the exciton recombination in semiconductors with a large number of dislocations: transients under spatially varying excitonic life time
K. K. Sabelfeld, A. E. Kireeva
Institute of computational mathematics and mathematical geophysics, SB RAS
Email: karl@osmf.sscc.ru
DOI: 10.24411/9999-017A-2019-10114
In this study a Monte Carlo simulation algorithm for modeling the exciton recombination in a semiconductor with a large number of dislocations having a piezoelectric field around them is developed. The Monte Carlo algorithm is based on the random walk on spheres algorithm suggested for solving the transient drift-diffusion-reaction problems in [1]. The stochastic simulation model of the exciton recombinations in the semiconductor is applied to evaluate the cathodoluminescence intensity. The cathodoluminescence method is employed for the analysis of a material structure and revealing of the dislocations in semiconductors. Recently [2] it has been suggested that a piezoelectric field around the threading dislocations affects the cathodoluminescence imaging of dislocations. The reason is that the strain field in the vicinity of dislocations produces a piezoelectric field which affects the excitonic life-time close to the dislocation edge and causes a drift of excitons. Our previous Monte Carlo models simulate the threading dislocation as a semi-cylinder whose surface adsorbs excitons with some recombination rate. In this work, we simulate the dislocation with a piezoelectric field which changes the life-time and the drift of excitons depending on the distance from the dislocation line. The cathodoluminescence transients are calculated for a desired number of dislocations.
The support of the Russian Science Foundation under grant N 19-11-00019 is kindly acknowledged. References
1. Sabelfeld K.K. Random walk on spheres algorithm for solving transient drift-diffusion-reaction problems. Monte Carlo Methods Appl. Vol. 23 (3), 189-212 (2017).
2. Kaganer, V. M., Sabelfeld, K. K., Brandt, O. Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}. Applied Physics Letters, 112 (12), 122101. 5 pp. (2018).
Stochastic simulation of electron and hole transport in semiconductors with a precise annihilation and non-radiative recombinations
K. K. Sabelfeld, A. E. Kireeva
Institute of computational mathematics and mathematical geophysics, SB RAS
Email: karl@osmf.sscc.ru
DOI: 10.24411/9999-017A-2019-10115
In this talk we deal with simulation algorithms for electron-hole annihilation in inhomogeneous semiconductors. This field attracted considerable experimental and theoretical interest during the past three decades since the optoelectronic properties of technologically important materials have been found to be controlled by the electron-hole recombination dynamics. We suggest a new version of the Random Walk on Spheres algorithm [1] combined with the kinetic Monte Carlo method based on a precise simulation of the first passage time and the random times of main events in the transport and recombination of electrons and holes in inhomogeneous semiconductors with a set of non-radiative centers. First suggested in [2] and further developed in [3], the stochastic method involved a bias caused by the approximate simulation of the conditional position inside a limiting sphere under the condition the time is preselected. In this presentation we show that a precise account of the kinetics of electron-hole annihilation is possible, and give some comparative simulations carried out by the original algorithm [2] and the new method suggested.
The support of the Russian Science Foundation under grant N 19-11-00019 is kindly acknowledged.
References
1. K. K. Sabelfeld, Monte Carlo Methods in Boundary Value Problems, Springer, Berlin, 1991.
