CC BY
2
Y^K 621.382
Implementation of Reading Electronics of Silicone Photomultiplier Tubes on the Array Chip
MH2XA030
Dvornikov 0. V.1, Tchekhovski V. A.2, Prokopenko N. N3'4, Galkin Ya. D.5, Kunts A. V.5, Bugakova A. V.3
1 Public Joint Stock Company "MNIPI", Belarus 2Institute for Nuclear Problems BSU, Belarus 3Don State Technical University, Russia; institute for Design Problems in Microelectronics of RAS, Russia 5Belarusian State University of Informatics and Radioelectronics, Belarus
E-mail: prokopniklOJO&gniaiLcom
The implementation of a charge-sensitive amplifier (CSA) based on the MH2XA030 array chip (AC) with an adjustable conversion factor for processing signals of silicone photomultipliers (SPM) is considered. The developed CSA. named ADPreampl3, contains a fast and slow signal circuit (SC). The fast SC includes a transresistive amplifier-sliaper with a base-level adjustment circuit, and a slow SC includes an CSA. a sliaper. and a base-level restorer (BLR) circuit. The main advantage of ADPreampl3 amplifier when used in multichannel integrated circuits is the minimum number of elements used, due to the use of the same stages to perform different functions. To correctly simulate the operation of ADPreampl3, taking into account the features of the input signal source, a simplified electrical equivalent circuit of the SPM. applicable to both circuit simulation and measurements, is proposed. Circuit simulation of ADPreampl3 using the proposed equivalent circuit of SPM with a supply voltage of ± 3 V, made possible to establish that: fast SC is characterized by the bandwidth up to 60 MHz and allows adjusting the base level in the range from -0.1 V to 0.2 V. Thus, it is possible to compensate the technological variation of the output voltage of the fast SC or set the required switching threshold of the comparator connected to the output of the fast SC: slow SC allows you to adjust the base level in the range from -1 V to 1 V and smoothly change the amplitude of the output signal, including phase inversion, when the control voltage changes from -1 V to 1 V; the BLR circuit provides a constant shape of the output voltage pulse with a DC input current of ADPreampl3, varying in the range of ± W0 and a negligible change of the base level at ± 20% of the resistance variation of integrated resistors. ADPreampl3 amplifier enables the transition to the "sleep" mode with a decrease in current consumption up to 10 pA, maintains operability at an absorbed dose of gamma radiation up to 500 krad and the effect of the integral neutron fluence up to 1013 n/cm2 and can be used in multi-channel signal processing chips of SPM.
Key words: silicone photomultiplier: readout electronics: array chip: charge-sensitive amplifier DOI: 10.20535/RADAP.2019.78.60-66
Introduction
Silicone photomultipliers are successfully used in a number of of science and technology for recording various types of electromagnetic emission. Moreover, in a number of products, the use of the SPM has significantly improved technical and economic indicators and transferred the electronic equipment being created to a new qualitative level fl 6].
The analysis of current trends in the design of reading electronics of the SPM allowed us to make an economically sound decision on the creation of reading electronics based on the AC MH2XA030 [7], for the elements of which the CSA circuit was developed.
The purpose of this article is to review the circuit simulation results of the CSA obtained nsing the proposed SPM model and the previously tested models of the AC elements.
1 The Circuit Simulation Results
The ADPreampl3 amplifier circuit developed for the AC MH2XA030 elements is shown in Fig. 1, 2. Fig. 1 illustrates the electrical circuit of the fast and slow signal circuits (SC), and Fig. 2 demonstrates a diagram of the unit for amplification control and base level setting, which provides the operation mode of the ADPreampl3 elements.
r Bias1 ^
J R15 5 J R16 5 J R17
Vee
' R18 R19 -
R20 R21 R22
—V\A-rW-r-\A/V-
C2 -L- C3 -L-"T" "T" Vcc
R23
—AAA-T—
: C4 -L- C5
Fig. 1. Electrical circuit of the fast arid slow SC of the amplifier ADPreampl3
Fig. 2. Electrical circuit of the unit for amplification control and base level setting of the amplifier ADPreampl3
Note that in Fig. 1. 2 all nodes with the same name (Vcc, Vee, G-, G+, Biasl, Bias2, Fil) are interconnected. The purpose of the nodes is the following: Vcc, Vee - positive and negative supply voltage; InpA - amplifier input; FOut fast SC output, OntA, OutAinv - direct and inverse output of the slow SC, FOntShift - voltage setting a base level for the fast SC output, OntAShift voltage setting a base level for the slow SC outputs, Gain voltage setting a value of the charge-voltage conversion factor Kqv at the outputs of the slow SC, BiasExtA resistor that sets the current consumption of the amplifier (Rexta = 15 ktt in Fig. , Rexta = 1 MOhm - for the "sleep" mode).
The main advantage of the ADPreampl3 amplifier in nmlti-channel integrated circuits is a minimum number of the elements, duo to the use of the same stages to perform different functions. So, the fast SC includes a transresistivo amplifier-shaper (Qs, Qi5, Qi6, Qm, Q20, Q21, R\, R5) with an emitter
follower (Q2, Q6, Q22) and a base level adjustment using resistor R10, and the slow SC - the same transresistivo amplifier-shaper with an emitter follower (Q1, Qs, Qr, Q2s), differential stage (DC) Q17, Q18 and the BLRC.
As is well known, the correct simulation of the reading electronics implies taking into account the shape of the output signal and the parameters of the SPM [8 12]. In [13, 14], an electrical model of the SPM and a method for identifying its parameters are proposed. The comparison of the results of simulation and measurements of the SPM, connected to the amplifiers of two types, confirming the adequacy of the model, is carried out.
Electrical equivalent circuit of the SPM with SiPM Photoniqne parameters, containing 516 microcells, is shown in Fig. 3, whore: N number of the switched - charge arising in one microcell when a photon hits; TD, TR, TF, PW, PER, II, 12 parameters of a rectangular ideal current source, namely, the time
delay, the rise arid fall time, the pulse duration, the period, the initial and final current values, respectively.
Unfortunately, it is difficult to apply the circuit shown in Fig. 3. to simulate an input source when measuring parameters of the reading electronics. We have developed a simplified electrical equivalent circuit of the SPM (Fig. ), providing at the 50 ohm load almost the same waveform (Fig. 5). as the circuit of Fig. 3. Moreover, the simulation of the SPM output signal showed that the charge arising in the switched on cells in an amount from 1 to 100 differs for the equivalent circuits of Fig. 3 and Fig. 4 not more than 1.2 %.
: Rq ' {774k/N}
TD = 10n TR = 10p TF = 10p PW = 1 n PER = 1u I1 = 0
I2 = {Q*N/1 n}
I Cq {21.2f*N}
Rqs
{774k/(516-IN}
: Cqs {21.2f*(516-N)}
Cd {40.8f*N}
=;= Cds
{40.8f*(516-N)}
cq. 18.1 p"
Fig. 3. SiPM Photoniqne electrical equivalent circuit with 516 microcells [14]
R1 100k -a/Vv-
R2
-AA/V-
51
C1 1u
R3 950
-AAA-
Inp
=!= C2 75p
Vs ©
Fig. 4.
V1 = 0
V2 = {Q*N/75p} TD = 10n TR = 250p TF = 250p PW = 500 n PER = 1u
SiPM Photoniqne simplified electrical equivalent circuit with 516 microcells
Kqv factor for the output of the slow SC, as the ratio of the maximum absolute valno of the output voltage to the maximum absolute valno of the input charge:
Tp of the output voltage;
ranges of permissible parameter adjustments;
the RMS valno of the noise current for the output of the fast SC, referred to the input;
the RMS valno of the noise charge for the output of the slow SC referred to the input;
20uA
10uA
0s 100ns
□ I(Rinp) I(RinpA)
200ns
300ns
Tim e
Fig. 5. Simulation results of the SiPM Photoniqne output signal for 10 switched on microcells: I(Rinp) -current flowing through the load resistance in the circuit of Fig. , I (Rjnpa) - current flowing through the load resistance in the circuit of Fig. . Rinp = Rinpa = 50 Ohm
Fig. 6 on results.
10 and the table 1 show the main simnlati-
1.0V t 50mV>
The developed simplified equivalent circuit of the SPM was used in the simulation of the reading electronics and will later be used for measuring the parameters of the manufactured ICs.
In order to adequately evaluate the operation of the ADPreampl3 amplifier in optoelectronic systems, we decided to apply a current signal to the input generated by the simplified electrical circuit of Fig. 4, corresponding to the fixed value of the switched on microcells (N = 1,3,5,10,30,50,100), i.e. to the input charge Qinp = 127.1 fC * N, and to determine the following parameters indicating the equivalent capacitance of the CD signal source:
- peak time Kiv factor for the output of the fast SC, as the ratio of the maximum absolute value of the output voltage to the maximum absolute value of the input current;
0V
0V
-50mV-
>>
-1.0V J -100mV-
(24.30n.812.15m) v(FOutShif t)=0.98
___rO
-B
(1
9 20 ,-81.60m)
(24.40n,-816.11m
0s 100ns
□] □ v(OutA) o v(OutAinv) EH v v(Fout)
Ti me
200ns
Fig. 6. Voltage pulses at the amplifier outputs for 10 switched on SPM microcells (Qinp = 1-271 pC) with Vfoutshift = 0.98 V
1
2
v(outA) ovv(outAinv)
Time
Fig. 7. Voltage pulses at the outputs of the OutA arid OutAinv amplifier with Qinp = 1-271 pC and the variation of the resistances of the resistors: 1 - 0.8R; 2- 1.2R
v v(OutA) v(OutAinv)
Tí me
Fig. 8. Voltage pnlses at the outputs of the OutA and OutAinv amplifier with Qinp = 0.1271 pC: at the top Voutshift = -0-1 V; at the bottom Voutshift = 0.1 V
□ v v v(OutA)-v(OutAinv)
Ti me
Fig. 9. Voltage pnlses between the outputs of the Ont A and OutAinv amplifier with Qinp = 1-271 pC and different control voltage: 1 V (Gain) 1 V: 2 V (Gain) 0.5 V; 3 V (Gain) 0.1 V
KQv,mV/fC
QiNP/fc
Fig. 10. Dependence of the maximum value of the Kqv conversion factor at the OutA output on the value of the Q inp input charge at CD «18 pF
Table 1 The main parameters of the amplifier ADPreampl3 when the supply voltage is equal to ±3 V, and Rexta = 15 k Q
Name of the parameter Value
Current consumption in idle mode, mA 5.71
Input impedance, Ohm 25
Kiv conversion fact or at C^ «18 pF, 4.78
mV/^A
The maximum value of the conversion 0.7
factor KQV at CD «18 pF, mV/fC
Base level adjustment range for the ±1
OutA outputs (OutlnvA), V
from
Base level adjustment range for the -0.1 to
FOut output, V 0.2
The peak time at the OutA/OutlnvA 14.5/13.5
outputs 'At CD «18 pF, Qinp «
1.3pC, ns
The peak time at the FOut output at 8.5
CD «18 pF Qinp « 1.3pC, ns
from
-3 dB bandwidth for the OutA (Outl- 2.55 to
nvA) output at CD « 18 pF, MHz 36.81
-3 dB bandwidth for the FOut output, MHz from 0 to 60.7
The RMS value of the noise current for 1.11
the FOut output, referred to the input
at CD «18 pF, ^A
The RMS value of the noise charge for 77.16
the OutA output, referred to the input
at CD «18 pF, fC
The performed simulation showed that:
a voltage chango in the FüntShift nodo within the rango frorn -3 V to 3 V canses a chango in the level of the DC voltage V (FOut) at the output of the fast SC frorn 0.2 V to -0.1 V. and V (FOut) « 0 with V (FOutShift) = 0.98 V
(Fig. 6). Thus, it is possible to compensate for the technological variation of V (FOnt) or to set the required switching threshold of a comparator of the fast SC when one of its inputs is connected to the zero voltage bus, and the second one is connected to FOut;
the BLR provides a constant voltage pnlso shape at the OntA, OntAinv outputs with a DC input current of the amplifier varying within the range of ± WO ^A, a negligible change in the base level, but a noticeable change in the shape of the output pulse of the slow SC at ± 20 % variation of the resistances of the integrated resistors (Fig. 7), although the voltage at the FOnt output with the specified variation of the resistors changes from 208.1 mV to -170.2 mV:
- when the external Rexta resistor is disconnected between the BiasExtA node and the Vcc power supply bus, the amplifier goes into sleep mode and its current consumption from the negative power supply decreases from 5.86 mA to
10 M;
the amplifier retains its parameters at the absorbed dose of gamma emission up to 500 krad and the effect of the integrated neutron finence up to 1013 n/cm2;
the BLR allows us to smoothly change the base level at the OntA, OntAinv outputs using the
voltage at the OntAShift node (Fig. 8). When
±
±1
in the developed amplifier, the amplitude of the output signal (Fig. 9), including phase inversion, is smoothly adjustable when the voltage V (Gain) in the Gain node changes from -IV to 1 V:
despite the relatively high RMS values of the noise current (1.11 ^A) and the noise charge (77.16 fC), the amplifier must provide the registration of two photons nsing SiPM Photoniqne, for which the maximum value of the current is 3.4 ^A, and of the charge - 254.2 fC, i.e. signal-to-noise ratio will be about 3.3.
Conclusion
For the AC MH2XA030 elements, an ADPreampl3 amplifier has been developed, containing a fast signal circuit and a slow one for signal processing of the SPM.
The fast signal circuit includes a transresistive amplifier-shaper with a bandwidth of up to 60 MHz, a base level trimming circuit in the range frorn-0.1 V to 0.2 V, and a slow signal circuit a chargesensitive amplifier-shaper with a circuit for restoring
and adjusting the base level within the recommended range from -1 V to 1 V and the possibility of electronic adjustment of the conversion factor.
The circuit for restoring and adjusting the base level provides a constant shape of the output voltage pnlso at the DC input current of the amplifier, varying
within the range of ± W0 ^A, and a negligible change ±
of the integrated resistors.
The ADPreampl3 amplifier enables to transfer to the ''sleep" mode with a decrease in current consumption up to 10 ^A, ensures safe operation with an absorbed dose of gamma emission up to 500 krad and the effect of the integrated neutron finence up to 1013 n/cm2 and can be used in multi-channel signal processing chips of the SPM.
Acknowledgments
The research is carried out at the expense of the Grant of the Russian Science Foundation (project № 16-19-00122-P).
References
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Реал1защя зчитуючо!" електрошки кремшевих фотоелектронних помно-жуватпв на базовому матричному кристал! МН2ХА030
Дворнгков О. В., ЧеховськийВ. О., Прокопенко М. М., Галкгн Я. Д., Кунц О. В., Бугакова Г. В.
Розгляпута реал!зац!я па базовому матричному кри-стал! МН2ХА030 зарядочутливого шдсплювача (ЗЧП) з регульовапим коефкцептом перетвореппя, призпаче-пого для обробкп сигпал1в кремшевих фотоелектронних помпожувач!в (Si®EII). Розроблепий ЗЧП. названий ADPreampl3, м!стить швидке i повгльпе сигпаль-пе коло (СК). Швидке СК включав трапсрезистивпий шдсилювач-формувач з! схемою шдстроюваппя базового р!впя. а повгльпе СК - ЗЧУ, формувач, схему в1дновлеш1я базового р!впя (ВБР). Головною перевагою
шдсплювача АБРгеашрВ у раз! його застосуваш1я в багатокапалышх 1С е миимальпа шльшсть використову-вапих елемептав, що обумовлепо застосуваш1ям одних 1 тих же каскад!в для викопаппя р1зпих фупкцш. Для ко-ректпого моделювашш роботи АБРгеашрВ з урахувап-пям особливостей джерела вх!дного сигналу запропопо-вапа сирощепа електричпа екв1валептпа схема 81ФЕП, що використовуеться як для схемотехшчпого моделюва-ппя, так 1 для вим1рювапь. Схемотехшчпе моделюваш1я АБРгеатр13 з використаш1ям запропоповапо! екв!ва-лептпо! схема 81ФЕП у раз!, якщо паируга джерела живлення дор!внюе ± 3 В, дозволило встановити, що:
- швидке СК характеризуется пропускною здатш-стю до 60 МГц 1 дозволяв шдлаштовувати базовнй р!вепь в д!апазош в!д -ОД В до 0,2 В. Таким чипом можлива компепсагця техполопчпого розкиду виндио! папруги швидкого СК або установки пеобх1дного порогу перемикаппя компаратора, що шдключаеться до впходу швидкого СК:
- повгльпе СК дозволяв регулювати базовий р!вепь в д!апазош в!д -1 В до 1 В 1 плавно змпиовати амшнту-ду виндпого сигналу, включаючи игоерсио фази, у раз! змши керуючо! папруги в!д -1 В до 1 В:
- схема ВВР забезпечуе пезмишу форму вггндпо-
го 1мпульсу папруги при постайпому вх!дпому струм!
±
пренебрежимо малу змшу базового р!вня у раз! ±20% в1дхилеппя зпачепь опор!в штегралышх резистор!в.
Шдснлювач АБРгеашрВ допускав перех!д в "спля-чнй" режим з! змепшеппям струму спожпваппя до 10 мкА, збер!гае працездатшсть при поглипешй доз! гамма-випромшюваппя до 500 крад 1 вплпш штеграль-ного потоку нейтрошв до 1013 н/см2 1 може знайтп застосувашш в багатокапалышх мшросхемах обробкп снгпал1в 81ФЕП.
Клюноог слова: кремшевий фотоелектрошшй помпо-жувач: зчитуюча електрошка: базовий матричний кри-стал: зарядочутливий шдснлювач
Реализация считывающей электроники кремниевых фотоэлектронных умножителей на базовом матричном кристалле МН2ХА030
Дворников О. В., Чеховский В. А., ПрокопенкоН. Н., Галкин Я. Д., Кунц А. В., Бугакова А. В.
Рассмотрена реализация па базовом матричном кристалле МН2ХА030 зарядочувствителыгого усилителя (ЗЧУ) с регулируемым коэффициентом преобразования, предназначенного для обработки сигналов кремниевых фотоэлектронных умножителей (81ФЭУ).
Разработанный ЗЧУ, названный АБРгеашрВ, содержит быструю и медленную сигнальную цепь (СЦ). Быстрая СЦ включает трапсрезистивпый усилитель-формирователь со схемой подстройки базового уровня, а медленная СЦ ЗЧУ, формирователь, схему восстановления базового уровня (ВВУ). Главным преимуществом усилителя АОРгеашр13 при его применении в многоканальных ИС является минимальное количество используемых элементов, обусловленное применением одних и тех же каскадов для выполнили разных функций. Для
корректного моделирования работы АБРгеатрВ с учетом особенностей источника входного сигнала предложена упрощенная электрическая эквивалентная схема 81ФЭУ, применимая как для схемотехнического моделирования, так и для измерений. Схемотехническое моделирование АОРгеатр13 с использованием предложенной эквивалентной схемы 81ФЭУ при напряжении источников питания, равном ±3 В, позволило установить, что:
- быстрая СЦ характеризуется полосой пропускания до 60 МГц и позволяет подстраивать базовый уровень в диапазоне от -0,1 В до 0,2 В. Таким образом возможна компенсация технологического разброса выходного напряжения быстрой СЦ или установка требуемого порога переключения компаратора, подключаемого к выходу быстрой СЦ;
- медленная СЦ позволяет регулировать базовый уровень в диапазоне от -1 В до 1 В и плавно изменять амплитуду выходного сигнала, включая инверсию фа-
зы, при изменении управляющего напряжения от -1 В ДО 1 В;
- схема ВВУ обеспечивает неизменную форму выходного импульса напряжения при постоянном входном токе АОРгеатр13, изменяющемся в диапазоне ±
±
пых резисторов.
Усилитель АБРгеатр13 допускает переход в "спящий" режим с уменьшением тока потребления до 10 мкА, сохраняет работоспособность при поглощенной дозе гамма-излучения до 500 крад и воздействии интегрального потока нейтронов до 1013 н/см2 и может найти применение в многоканальных микросхемах обработки сигналов 81ФЭУ.
Ключевые слова: кремниевый фотоэлектронный умножитель; считывающая электроника; базовый матричный кристалл; зарядочувствительный усилитель
