CC BY
4The 30th International Conference on Advanced Laser Technologies
LD-O-11
ALT'23
Ultrafast spectroscopy of tungsten disulfide nanotubes
M. Paukov1, A. Goldt2, A. Suyi1, D. Yakubovsky1, A. Melnikov3, G. Komandin4, M. Burdanova15
1- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, 141700
Dolgoprudny, Russia
2- Center for Photonic Science and Engineering, Skolkovo Institute of Science and Technology, 3 Nobel Str., 121205
Moscow, Russia
3- Institute of Solid State Physics, Russian Academy of Science, 5 Physicheskaya Str., 142092 Troitsk, Russia 4 - Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilova Str., 119991 Moscow, Russia
5- Osypian Institute of Solid State Physics, Russian Academy of Sciences, 2 Osypiana Str., 142432 Chernogolovka,
Russia
Tungsten disulfide (WS2) belongs to the class of transition metal dichalcogenides (TMDs), whose low-dimensional properties include strong photoluminescence [1], tunable bandgap [2] and etc. These properties provide various optoelectronic applications for this material [3],[4]. Here we study quantum confined WS2 nanotubes (WS2NT) on the subject of ultrafast processes emerging there. Their experimental research includes the creation of non-equilibrium state by means of photoexcitation in the experiments of optical pump - terahertz probe (OPTP) and transient absorption spectroscopy (TAS) in visible and near-infrared ranges. The obtained spectra combined with steady-state broadband absorbance spectrum (UV-Vis-NIR AS, FTIR, THz-TDS) and Raman spectrum reveal the presence of defects, trions, excitons, exciton polaritons and their evolution on picosecond timescale. Time constants of these processes are determined. Also, the photoconductivity in THz range is investigated and compared to the equilibrium THz conductivity. This research presents interest both in fundamental science, since it sheds more light on the processes in quasi-1D TMDs, and in practical applications of ultrafast optoelectronics.
This work was supported by the Russian Science Foundation (RSF), research project # 22-72-10033.
[1] A. Splendiani et al., "Emerging photoluminescence in monolayer MoS2," Nano Letters, vol. 10, no. 4, pp. 1271-1275, (2010).
[2] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, "Atomically thin MoS2: A new direct-gap semiconductor," Physical Review Letters, vol. 105, no. 13, (2010).
[3] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, "Single-layer MoS2 transistors," Nature Nanotechnology, vol. 6, no. 3, pp. 147-150, (2011).
[4] J. S. Ross et al., "Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions," Nature Nanotechnology, vol. 9, no. 4, pp. 268-272, (2014)
