CC BY
14ALT'22
LASER SYSTEMS AND MATERIALS
LS-O-4
Thin Film Chalcogenide Materials for Photonic Applications
A.V. Kiselev, A.A. Burtsev, V.V. Ionin, N.N. Eliseev, A.A. Nevxorov, V.A. Mikhalevsky, A.A. Lotin
ILIT RAS — Branch of FSRC "Crystallography and Photonics " RAS, 1, Svyatoozerskaya Str., 140700, Shatura, Moscow Region, Russia Main author email address: [email protected]
Non-volatile all-photonic memory and neuro-inspired computing are promising technologies for increasing data storage and processing [1]. Photonic memory devices combine the high operation speed and non-volatility. Neuro-inspired computing unifies processing with storage in a single cell. Among materials for optical data storage and electric non-volatile memory devices, chalcogenide alloys based on germanium telluride (GeTe, Ge2Sb2Te5) are the most mature and widely used in photonic and optoelectronic devices [2]. These alloys have very high amorphization and crystallization rates in the order of nanoseconds which, combined with large cyclability and a pronounced property contrast between the crystalline and amorphous phases [3, 4]. The presenting results include stable multilevel reversible phase transitions in thin films chalcogenide (GeTe, Ge2Sb2Te5) and optical synapse prototype based on planar waveguide with chalcogenide cell. Thin films were deposited by vacuum thermal sputtering. Phase transitions in thin films were induced by nanosecond pulsed laser radiation with «top hat» intensity distribution and different fluence [5]. Structural information was characterized in situ optical parameters measurement, electron microscopy and X-ray diffractometry. Multi-bit devices provide a pathway towards eliminating the von Neumann bottleneck and discover a new applications in all-photonic data storage and computing [6, 7].
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