CC BY
4*
ALT'23
The 30th International Conference on Advanced Laser Technologies
LS-P-7
Theoretical and experimental study of electronic properties of ZnImSe4 compound
I.A. Mamedova1, Z.A. Jahangirli1,2, E.G. Alizade1, T.G. Mammadov1, N.A. Abdullayev1,2
1-Institute of Physics Ministry of science and education. Azerbaijan, Baku, Azerbaijan 2-Baku State University, Baku, Azerbaijan E-mail: irada_mamedova@yahoo. com
ZnIn2Se4 belongs to the AAB\C\ defective chalcopyrite family, attracting the attention of many researchers
due to its potential application in semiconductor devices such as solar cells [1], memory devices [2], etc.
We have obtained and characterized by X-ray diffraction and Raman spectroscopy crystals of defective chalcopyrite ZnIn2Se4. Ab initio calculations of electronic, including optical, properties were carried out on the basis of DFT using the method of full-potential linearized augmented plane waves (FP-LAPW) implemented in the Wien2k code. Spectral ellipsometry was used to experimentally study the optical characteristics of ZnIn2Se4 semiconductor compounds. The calculated and experimental real and imaginary parts of dielectric function of ZnIn2Se4 are shown in Fig. 1. The main peaks of the calculated real and imaginary parts of dielectric function are located around 2.8 eV and 5.0 eV, respectively.
Fig. 1 Calculated and experimental real and imaginary parts of dielectric function of ZnIn2Se4
The absorption coefficient a, refractive n and extinction k indices were measured and calculated, the values of which are compared with the literature data.
The results of a study of photoluminescence in a wide temperature range from 10K to 300K of ZnIn2Se4 are presented. For the first time, a band with a maximum at 725 nm (1.71 eV) with a short-wavelength shoulder at 685 nm (1.81 eV) and a less intense infrared broad band with a maximum at 896 nm (1.39 eV) were found in the PL spectrum for the first time.
[1] F.J. Garcia and M.S. Tomar, n-CdS/p- ZnImSe4 thin film solar cell. Thin Solid Films. v. 69, pp. 137-139 (1980).
[2] J. Filipowicz, N. Romeo and L. Tarricone, Photoelectrical memory effect in ZnImSe4. Solid State Communications. v.38. pp. 61962 (1980).
