CC BY
0The influence of the hydrogen-containing surface of nanodiamonds on the luminescence intensity of "silicon-vacancy"
centers
O. Kudryavtsev1*, R. Bagramov2, V. Korepanov3, T. Rudneva3, V. Filonenko2, I. Vlasov1
1- Prokhorov General Physics Institute of the Russian Academy of Sciences, Russia
2- Vereshchagin Institute of High-Pressure Physics of the Russian Academy of Sciences, Troitsk, Russia 3- Institute of microelectronics technology and high purity materials of the Russian Academy of Sciences,
Chernogolovka Russia
* leolegk@mail.ru
Nanodiamonds (NA) with negatively charged silicon vacancy color centers (SiV) are successfully used by us as sensors of ultralocal "temperature" fields [1,2]. One of the most promising methods for producing such products is their synthesis from hydrocarbons at high temperature and high pressure (NRNT synthesis). The surface of such layers is terminated by hydrogen, which induces a near-surface conductive layer of the acceptor type. The presence of a large number of acceptors can affect the charge state of the SiV centers in the NA, transferring them to an optically inactive neutral state. It has a negative impact on SiV centers. This work is devoted to the study of the effect of the hydrogen-terminated surface of HPNT nanodiamonds with a size of 100-300 nm on the luminescence intensity of silicon vacancy centers. To do this, hydrogen was removed from the surface of nanodiamonds by annealing in air at various temperatures in the range of 400-600 degrees. The efficiency of hydrogen removal from the surface of nanodiamonds was controlled by IR absorption spectroscopy. It was found that during annealing of nanodiamonds at a temperature of 600 degrees, the lines of C-H valence vibrations completely disappear in the IR spectrum, which indicates the effective removal of hydrogen from the surface of nanodiamonds at this temperature. Analysis of the spatial distribution of the intensity of SiV luminescence before and after annealing for a large ensemble of NA dispersed on the surface of a silicon substrate showed that the average intensity level increases by about 50% after removal of hydrogen from the surface of NA. The greatest luminescence amplification is observed for particles of about 100 nm in size, and practically no amplification occurs for 300 nm particles.
This work was supported by Russian Science Foundation, grant No 23-14-00129 (https://rscf.ru/project/23-14-00129/).
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