THz-O-7
Terahertz response of silicon surface with nanoscale gold particles
A. Sinko1,2, K. Moldosanov3, P. Solyankin2,I. Ozheredov1,2, A. Shkurinov1,2 1MSU, Faculty of Physics, Moscow, Russian Federation
2ILIT RAS — Branch of FSRC "Crystallography and Photonics" RAS, n/a, Shatura, Russian Federation
3Kyrgyz Russian Slavic University, Department of Natural and Technical Sciences, Bishkek, Kyrgyzstan
The spectra of terahertz generation from the surface of silicon crystals with different types of conductivity upon excitation by femtosecond laser pulses at different temperatures were experimentally recorded. Comparison of the characteristic spectral features with the energy structure of the impurity levels of silicon makes it possible to identify the type of sample conductivity. A comparison is made with the results obtained at cryogenic temperatures in the case of deposition of gold nanoparticles on the surface of a semiconductor (Fig. 1). The spectral features obtained after the deposition of nanoparticles are considered in the model of terahertz re-radiation as a result of their two-phonon absorption.
1E-3-I—i—i—i—i—i—i—'—i—>—i—<—i—>—i—» 0 2 4 6 8 10 12 14
Frequency (THz)
Fig. 1. THz emission spectra from the surface of p-type silicon in the case of a clean surface and in the case of
nanoparticle deposition.