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№ 12 (117)
UNIVERSUM:
ТЕХНИЧЕСКИЕ НАУКИ
декабрь, 2023 г.
DOI -10.32743/UniTech.2023.117.12.16568
STUDY OF THE DEPENDENCE OF THE BASE THICKNESS OF A DUAL-SIDED SENSITIVE SOLAR CELL ON THE IMPURITY CONCENTRATION
Murodjon Komilov
PhD doctoral student at Andijan State University, Republic of Uzbekistan, Andijan
Dilnoza Khonbutaeva
PhD doctoral student at Andijan Machine-Building Institute, Republic of Uzbekistan, Andijan
Shokhida Kakhramonova
PhD doctoral student at Andijan State University, Republic of Uzbekistan, Andijan
Avazbek Mirzaalimov
Senior Lecturer, Department of General Physics, PhD Andijan State University Republic of Uzbekistan, Andijan
Navruzbek Mirzaalimov
Senior Lecturer, Department of Condensed Matter Physics, Andijan State University Republic of Uzbekistan, Andijan E-mail: mirzaalimov90@mail. ru
ИССЛЕДОВАНИЕ ЗАВИСИМОСТИ ТОЛЩИНЫ ОСНОВАНИЯ ДВУСТОРОННЕГО ЧУВСТВИТЕЛЬНОГО СОЛНЕЧНОГО ЭЛЕМЕНТА ОТ КОНЦЕНТРАЦИИ ПРИМЕСЫ
Комилов Муроджон
PhD докторант Андижанского государственного университета, Республика Узбекистан, г. Андижан
Хонбутаева Дилноза Алимжоновна
PhD докторант
Андижанского машиностроительного института, Республика Узбекистан, г. Андижан
Кахрамонова Шохида Шавкатбек кизи
PhD докторант Андижанского государственного университета, Республика Узбекистан, г. Андижан
Мирзаалимов Авазбек Алишерович
ст. преподаватель кафедры общей физики, PhD Андижанский государственный университет Республика Узбекистан, г. Андижан
Библиографическое описание: STUDY OF THE DEPENDENCE OF THE BASE THICKNESS OF A DUAL-SIDED SENSITIVE SOLAR CELL ON THE IMPURITY CONCENTRATION // Universum: технические науки : электрон. научн. журн. Komilov M. [и др.]. 2023. 12(117). URL: https://7universum.com/ru/tech/archive/item/16568
№ 12 (117)
UNIVERSUM:
ТЕХНИЧЕСКИЕ НАУКИ
декабрь, 2023 г.
Мирзаалимов Наврузбек Алишер угли
ст. преподаватель кафедры физики конденсированных сред, Андижанский государственный университет Республика Узбекистан, г. Андижан
ABSTRACT
Prospects for the use of renewable energy sources are increasing day by day. The most efficient way to use renewable energy sources is to use solar energy. The conversion of solar energy into electricity is done through solar panels. There are 2 types of solar panels currently being produced, they are single-sided and double-sided sensitive solar elements. Both types are designed to convert energy from the sun into electricity. In this work, using the Sentaurus TCAD program, it was determined that the input concentration in the base layer of a double-sensing solar cell is directly proportional to the output power. In this case, it was found that the value of the input concentration increases, and it changes more at higher concentrations and less at lower concentrations. The main reason for this is that the input concentration in the base layer is close to the concentration of the metal contact in its back part, and the ohmic resistance is reduced by modeling.
АННОТАЦИЯ
Перспективы использования возобновляемых источников энергии растут с каждым днем. Наиболее эффективным способом использования возобновляемых источников энергии является использование солнечной энергии. Преобразование солнечной энергии в электричество осуществляется с помощью солнечных батарей. В настоящее время производятся 2 типа солнечных панелей: односторонние и двусторонние чувствительные солнечные элементы. Оба типа предназначены для преобразования энергии солнца в электричество. В данной работе с помощью программы Sentaurus TCAD было определено, что входная концентрация в базовом слое солнечного элемента двойного зондирования прямо пропорциональна выходной мощности. При этом было обнаружено, что значение входной концентрации увеличивается, причем оно меняется больше при более высоких концентрациях и меньше при более низких концентрациях. Основная причина этого заключается в том, что входная концентрация в базовом слое близка к концентрации металла контакта в его тыльной части, а омическое сопротивление снижается за счет моделирования.
Keywords: solar panels, dual sensitive, energy, efficiency, Sentaurus TCAD, modeling.
Ключевые слова: солнечные панели, двойная чувствительность, энергия, эффективность, Sentaurus TCAD, моделирование.
Nowadays, the energy demand of all countries is increasing day by day. As the energy reserve decreases in the state sector, its saving or use of renewable energy sources is being implemented [1,2]. Prospects for the use of renewable energy sources are increasing. In particular, Uzbekistan and developed countries are using solar energy, water and wind energy [3,4]. The most efficient way to use renewable energy sources is to use solar energy. The sun has a huge energy reserve and its use is becoming the energy of the future. The conversion of solar energy into electricity is done through solar panels [5]. There are 2 types of solar panels currently being produced, they are single-sided and double-sided sensitive solar elements. Both types are designed to convert solar energy into electricity [6].
Dual sensitive solar panels are being widely manufactured in the industry. These types of solar panels are modern and produce several times more power than single-sided sensitive solar panels [7]. Dual sensitive solar
panels work based on the diffuse scattering of sunlight from the back surface. The structure and operation of each solar cell is a complex process [8]. Therefore, we aimed to study the principles of operation of this type of solar cells. Since the sizes of solar elements are small and the processes in them are complicated, we studied them by the method of modeling. The goal of modeling is to simplify calculations, increase accuracy, and eliminate errors in experimental results. The selected program plays an important role in the modeling method. Of course, it is not correct to use any programming languages and programming devices, the program we used is Sentaurus TCAD and Material studio software, which has the ability to model all physical processes and learn as a device.
Since we mainly used Sentaurus TCAD and Material Studio software for modeling, we first created a model of the silicon element in the solar cell. Below are silicon crystal lattices made in Material Studio.
№ 12 (117)
UNIVERSUM:
ТЕХНИЧЕСКИЕ НАУКИ
декабрь, 2023 г.
Figure 1. Models of the structure of the silicon crystal in the solar cell.
We have modeled the structure of the silicon crystal form, through which we can calculate the distribution of electrons in silicon and their mechanical stability. When using it as a device, we can create the geometric size of the solar element and its parameters in the SDE section of the Sentarus TCAD program. In them, we determine the calculation quantities by the method of meshing. After that, it will be possible to study it as a ready-made device. When learning as a device, using the SDEVISE section, it will be possible to access and apply what external influences can be applied to it, as well as the constants in them. Formulas for calculating the processes occurring in them due to external influence are presented. In particular, we will be able to determine these quantities: light intensity, optical absorption, recombination, mobility of charge carriers and residence time.
Based on the possibilities of this program, we will give the necessary formulas for calculating the electro-physical processes in the silicon material, the basis of the solar cell, and for using it as a device. Due to the p-n junction in the solar cell, an internal electric field is created and separates the electron-hole pair from each other. Then the transfer of charge carriers occurs. The movement of charge carriers creates an electric current. In Sentaurus TCAD, there are mainly 4 models for calculating the transfer of charge carriers: Drey-Diffusion, Thermodynamic, Hydrodynamic and Monte Carlo. In this scientific work, the Drift-Diffusion model given in formula 6 was used to calculate the migration of charge carriers, since the effect of temperature on the solar cell was not taken into account.
= Мл(пУЕс -1.5пкТУ\птл) + D^Vn-nVlnr,) Jp = a (pWEv +1.5pkTW In m _ ) - D (Vp - pV In y )
(1)
Here: Jn and Jp are the current density generated by electrons and holes, mn and mp are the effective mass of electrons and holes, jn and jp are quantities determined using the Fermi function, Dn and Dp are the diffusion coefficient of electrons and holes, ¡n and ¡p are the mobility of electrons and holes.
The Masetti formula was used to calculate the mobility of charge carriers. Masetti's empirical formula takes into account the effect of temperature, impurity concentration and phonon scattering on the mobility of charge carriers. Because silicon is a defect semiconductor, radioactive recombination is not taken into account when modeling silicon-only devices. Therefore, only Auger and Shockley-Read-Hall recombination are taken into account. In addition, the role of metal contacts in the quality of solar cells is significant. Due to the fact that the calculation is carried out using numerical methods, electrical boundary conditions should also be included in the model. It was determined that an ohmic transition was formed between the contact and the semiconductor, and the ohmic boundary conditions were used.
jm •n = (jn + jp + jd ) • n
M0
n = n
Here: Jm is the current density created by charge carriers in the metal, Jd is the diffusion current density, $ is the electrostatic potential, 0 is the fermi potential in the metal, 00 is the electrostatic potential in the equilibrium state, n0 and p0 are the electron and hole concentrations in the equilibrium state.
Results determined in Sentaurus TCAD software, a single-sided then a dual-sensing solar cell was exposed to AM 1.5g light beam, a single-sided sensitized solar cell was exposed to the frontal part of the light beam, and a double-sensitized solar cell AM1.5g light beam was exposed to the front and back of the solar cell equally vertically. The back surface of the dual-sensitive solar cell was exposed to light through the glass. In this way, we exposed the solar elements to light. A light beam falling on a solar cell is absorbed in its emitter layer, and a p-n junction is formed. The depth of the p-n transition depends on the distance of the light beam. since the light beam falling from the front is close to the p-n junction, and when it is falling from the back, it is farther from the p-n junction, so the energy of the light from the back side means the recombination of charge carriers until it reaches the limit of the p-n junction and creates an additional electric field. The following graphs show the absorption of light from the front and back.
P = Po
(2)
№ 12 (117)
UNIVERSUM:
ТЕХНИЧЕСКИЕ НАУКИ
декабрь, 2023 г.
Figure 2. Dual sensitive solar cell geometric shape
The volt-ampere characteristic of the solar cell was obtained based on this finding. It was found that a solar cell with double-sided illumination is better than a solar
cell with single-sided illumination. Below are the voltampere characteristics of solar cells in double beam and single beam.
Voltage, V
Figure 3. I-V characteristics of 1 and 2-way sensitive solar cell
As can be seen from this Fig. 3, the output voltage and short-circuit current of the double-sensing solar cell is 1.5 times the short-circuit current and 1.05 times the output voltage compared to the single-sensing solar cell. These indicators are presented for cases where the width of the base of the solar cell is 8 ^m and the thickness of the emitter layer is 1 ^m. In this case, the concentration of the emitter layer is phosphorus with 1017 cm-3, and
boron is included in the base layer with 1015 cm-3. This impurity concentration is of great importance and if we increase the values of the impurity concentrations in both layers, it can be seen that the output power in them increases. The Fig. 3 below shows the relationship between the impurity concentration and the thickness of the base layer.
Figure 4. The dependence of the solar cell base thickness on the output power
№ 12 (117)
UNIVERSUM:
ТЕХНИЧЕСКИЕ НАУКИ
декабрь, 2023 г.
It can be seen from the graph that the impurity concentration at the base of the double sensitive solar cell increases in direct proportion to the output voltage. In our experiment, we performed calculations by increasing the concentration of boron in the base part from 1013 cm-3 to 1016 cm-3. We have also studied the base width for this type of solar cell, where it can be seen that the output power decreases as the base width increases.
In short, it was found that the impurity concentration in the base layer of the double sensitive solar cell is directly proportional to the output power. In this case, it was found that the value of the impurity concentration increases, and it changes more at higher concentrations and less at lower concentrations. The main reason for this is that the impurity concentration in the base layer is close to the concentration of the metal contact in its back part, so the ohmic resistance decreases.
References:
1. J. Gulomov, R. Aliev, N. Mirzaalimov, B. Rashidov, J. Alieva Study of Mono- and Polycrystalline Silicon Solar Cells with Various Shapes for Photovoltaic Device with 3D Format: Experiment and Simulation // Journal of Nano-and Electronic Physics. Volume 14 (2022 Year), No.5, pp. 05012-1 - 05012-8.
2. Mirzaalimov A., Aliev R., Mirzaalimov N., Gulomov J. Simulation photoelectric parameters of vertical junction solar cells // International Journal of Advanced Trends in Computer Science and Engineering. Volume 10, №.2, March - April 2021. 543-548. (№14).
3. A. Mardani, A. Jusoh, E.K. Zavadskas, F. Cavallaro, and Z. Khalifah, "Sustainable and Renewable Energy: An Overview of the Application of Multiple Criteria Decision Making Techniques and Approaches," Sustainability 2015, Vol. 7, Pages 13947-13984, vol. 7, no. 10, pp. 13947-13984, Oct. 2015, doi: 10.3390/SU71013947.
4. P. Fath, S. Keller, P. Winter, W. Joofi, and W. Herbst, "Status and perspective of crystalline silicon solar cell production," Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 002471-002476, 2009, doi: 10.1109/PVSC.2009.5411274
5. S. Jun Jang et al., "Antireflective property of thin film a-Si solar cell structures with graded refractive index structure," Optics Express, Vol. 19, Issue S2, pp. A108-A117, vol. 19, no. 102, pp. A108-A117, Mar. 2011, doi: 10.1364/0E.19.00A108.
6. M.S. Sarker, M.F. Khatun, S.R. al Ahmed, and J. Hossain, "Optimization of multilayer antireflection coatings for improving performance of silicon solar cells," 5th International Conference on Computer, Communication, Chemical, Materials and Electronic Engineering, IC4ME2 2019, Jul. 2019, doi: 10.1109/IC4ME247184.2019.9036677.
7. J. Schmidt et al., "Advances in the Surface Passivation of Silicon Solar Cells," Energy Procedia, vol. 15, pp. 30-39, Jan. 2012, doi: 10.1016/J.EGYPR0.2012.02.004.
8. Y. Wan, K.R. McIntosh, and A.F. Thomson, "Characterisation and optimisation of PECVD SiNx as an antireflection coating and passivation layer for silicon solar cells," AIP Advances, vol. 3, no. 3, p. 032113, Mar. 2013, doi: 10.1063/1.4795108.
