Semiconductor nanowires for integrated and nonlinear photonics
A. Bolshakov1
1- Centre for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology,
141701 Dolgoprudny, Russia
bolshakov@live.com
Here we utilize and explore epitaxial gallium phosphide (GaP) nanowires (NWs) as a platform for integrated nanophotonics. We highlight the unique properties of GaP NWs, such as high crystallinity, mechanical strength, low optical losses, and a high refractive index, which make them ideal candidates for developing photonic devices.
First, the presented research investigates the waveguiding capabilities of GaP NWs, both theoretically and experimentally, demonstrating their ability to support waveguiding modes throughout the visible and near-IR ranges. The study explores the limitations of waveguiding in GaP NWs, particularly focusing on the lateral dimensions of waveguides for a given wavelength range.
Additionally, the manuscript delves into the practical applications of GaP NWs in developing advanced photonic elements, such as optical couplers, and discusses the potential pathways for their integration into integrated optical circuits and logic elements. We provide insights into the design and fabrication processes utilizing GaP NWs and highlight their potential for future computing applications.
The optomechanical manipulation and optical characterization was performed with single GaP NWs as promising platform for future nanophotonic circuitry. The study investigates the nonlinear generation efficiency of optically trapped GaP NWs, considering their geometry and SH response. Experimental and theoretical analyses provide insights into phase-matching conditions and optimization strategies for NW geometries in optoelectronic applications. Various optical signals are utilized for comprehensive characterization, including a wideband supercontinuum white laser for linear spectroscopy and a femtosecond infrared source for trapping and second harmonic generation. This research sheds light on the potential of GaP NWs for integrated photonics devices and demonstrates the impact of geometry on nonlinear optical properties, paving the way for advanced nanophotonic applications.
Overall, this manuscript contributes to the growing field of integrated nanophotonics by showcasing the unique capabilities of GaP NWs and opening up new possibilities for the development of photonic devices and circuits.