CC BY
7*
ALT'23 The 30th International Conference on Advanced Laser Technologies
LD-I-15
Near-field plasmon-enhanced spectroscopies of semiconductor nanostructures
A.G. Milekhin1, I.A. Milekhin2, N.N. Kurus1, L.S. Basalaeva1, R.B.Vasiliev3, K.V. Anikin1, V.G. Man-surov1, K.S. Zhuravlev1, A.V. Latyshev14, D.R.T. Zahn2
1-A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Lavrentjev av. 13, Russia 2- Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany 3- Department of Material Science, Moscow State University, Moscow, Russia 4- Novosibirsk State University, Novosibirsk, 630090, Pirogov str., 1, Russia
milekhin@isp. nsc. ru
Near-field plasmon-enhanced spectroscopies including Tip-Enhanced Raman scattering and photoluminescence (TERS and TEPL) were successfully applied to study the phonon and electron spectra of 2D, 1D, and 0D nanostructures with the spatial resolution much below diffraction limit.
TERS imaging by optical phonons in single 2D nanostructures including multi- and monolayer- gra-phene, 1D AlN nanocolumns, and 0D CdSe nanoctrystals (NCs) placed in the gap between the TERS tip apex and plasmonic substrate allows determination of nanostructure size and shape, structural defects, mechanical strain, and local electromagnetic field enhancement.
The origin of ring-like TERS patterns with different diameters obtained for a single gold nanodisk with a monolayer coating of colloidal CdSe NCs excited with 638,2 and 785,3 nm wavelengths is discussed. TERS by surface optical (SO) phonons in AlN nanocolumns placed on an Au surface was observed. TERS taken for AlN nanocolumns with a diameter and height of about 200 and 50 nm, respectively, with different light polarizations with respect to the nanocolumn axes demonstrates different images. The origin of the changes in TERS images upon the light polarization is discussed.
TEPL from MoS2 and WS2 monolayer islands grown on a Si substrate reveals local variation of exciton PL energy and intensity depending on the number of monolayers and the presence of structural defects. The enhancement and quenching of TEPL originated from direct and indirect transitions in 1D and 0D single GaAs nanostructures is reported.
Acknowledgements
This work was supported by the Russian Science Foundation (project 22-12-00302).
