CC BY
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ALT'23
The 30th International Conference on Advanced Laser Technologies
P-I-5
Modification of the luminescence response of Si-Ge materials in low-dimensional photonic structures
M. Stepikhova1, S. Dyakov2, M. Petrov3, V. Verbus1, Zh. Smagina4, V. Zinoviev4, A. Peretokin1, D. Yurasov1, M. Shaleev1, E. Rodyakina4, A. Novikov1
1-Institute for Physics of Microstructures Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia 2- Skolkovo Institute of Science and Technology, 143026Moscow, Russia 3- ITMO University, St. Petersburg 197101, Russia 4- Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090
Novosibirsk, Russia
mst@ipmras.ru
The possibilities to control emitting properties of materials in low-dimensional photonic structures are among the most actively investigated topics to date. The development of technologies and, as a result, the opening up opportunities for creating photonic structures with dimensions comparable to or smaller than the emission wavelength gave impetus to the discovery of new phenomena and the creation of new emitting sources using low-dimensional effects. In particular, in this paper, we will consider light-emission phenomena in low-dimensional Mie resonators and arrays of such resonators, as well as in photonic crystals (PhCs) (Fig. 1), the features of the band structure of which can be controlled by changing the parameters. The studied low-dimensional resonators and photonic crystals were formed on silicon structures with Ge(Si) nanoislands emitting in the wavelength range of 1.2-1.6 ^m. Interest in these structures is due, first of all, to the possibility of creating effective light-emission sources on their basis, technologically compatible and easily integrated into the circuits of modern micro- and optoelectronics. It will be shown that the embedding of Ge(Si) nanoislands into low-dimensional resonators and photonic crystals makes it possible to increase the emitting efficiency of structures by more than two orders of magnitude and to control their spectral response and radiation pattern. The paper discusses the observation conditions and features of manifestations in the studied photonic structures of bound states in the continuum (BIC) [1, 2], collective modes and modes with a flat dispersion characteristic [3], and the phenomenon of mode interaction in photonic crystals.
[ I I I I I I I 1
Ge QD
i^m
a)
c)
b)
Fig. 1. Photonic structures realized on Si with Ge(Si) nanoislands: a) - single Mie resonator; b) - arrays of Mie resonators: square lattice and chain;
c) - 2D photonic crystal.
The work was funded by the Russian Science Foundation (grant #19-72-10011).
[1] S. Dyakov, M. Stepikhova, A. Bogdanov et. al., Photonic bound states in the continuum in Si structures with the self-assembled Ge nanoislands, Laser & Photonics Reviews, 15, p. 2000242, (2021).
[2] M.V. Stepikhova, S.A. Dyakov, A.V. Peretokin et. al., Interaction of Ge(Si) Self-Assembled Nanoislands with Different Modes of Two-Dimensional Photonic Crystal, Nanomaterials, 12, p. 2687, (2022).
[3] A.V. Peretokin, D.V. Yurasov, M.V. Stepikhova et. al., Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation, Nanomaterials, vol. 13, pp. 1678, (2023).
