CC BY
13LP-I-12
Laser modification of silicon for creation of light emitting structures with dislocations related luminescence
D. Polyakov1, V. Veiko1, N. Sobolev2, A. Kalyadin2, V. Vdovin3
1ITMO University, Faculty of Laser Photonics and Optoelectronics, Saint-Peterburg,
Russian Federation
2Ioffe Institute, Laboratory of Physics of Semiconductor Devices, Saint-Petersburg, Russian Federation
3Rzhanov Institute of Semiconductor Physics, Laboratory of Nano-diagnostic and Nanolithography, Novosibirsk, Russian Federation
The problem of creation of effective silicon-based light emitter is one of the most important for optoelectronic technology. There are several approaches to solve this problem: implantation of erbium ions into silicon [1], using of silicon nanostructures [2], formation of strained germanium layers on silicon [3] etc. The promising way is to use so called dislocation-related luminescence (DRL), since the most intensive DRL line in silicon (D1) «survive» at room temperature and correspond to the transparency window of fiber optics (~ 1.55 pm) [4]. Several researches show that laser treatment of silicon lead to the creation of dislocations [5], however it's luminescence properties were not studied in details. Thus the aim of this work is to investigate the structural and luminescence properties of silicon after laser irradiation and optimization of laser processing modes for creation light-emitting structures with intense luminescence at wavelength ~1.55 pm. In our experiments we use different laser processing modes: multipusle irradiation by nanosecond pulses (with various pulse fluences, pulse durations, total irradiation doses etc) that allows to introduce dislocations into surface layers, irradiation in CW mode that allows to introduce the dislocation throughout the thickness of the plate, irradiation by femtosecond pulses. Plates of Cz-Si and Cz-Si/SiO2 structures were used as samples.
The structural properties after irradiation were studied by transmittance electron microscopy and atomic force microscopy. Luminescent properties were studied at different temperatures from
helium temperatures up room temperatures. The photoluminescence spectrum obtained on Si/SiO2 structure after irradiation by series of nanosecond pulses is shown at fig.1. One can see the appearance of DRL. Properties of obtained spectrums were studied in details at different temperatures.
Our research shows that laser irradiation of silicon can be considered as a perspective technological tool for the controlled 1200 1300 1400 1500 1600 1700 introduction of optically active extended ^ nm defects into silicon for further creation of light
emitting diodes.
Fig. 1.
References
[1] A.J. Kenyon. Erbium in silicon// Semicond. Sci. Technol., V.20. pp. R65-R84, 2005.
[2] F. Priolo, T. Gregorkiewicz, M. Galli, T. F. Krauss. Silicon nanostructures for photonics and photovoltaics// Nature Nanotechnology, V. 9, pp. 19 - 32, 2014.
[3] Camacho - Aguilera R.E., Cai Y., Patel N. et al. An electrically pumped germanium laser // Opt. Express, V.20, p.11316, 2012.
[4] Sobolev N.A. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence // Semiconductors. Springer, V.. 44, pp. 1-23, 2010.
[5] Skvortsov A.M., Veiko V.P., Huynh C., Polyakov D.S., Tamper A.M. Modification of the SiO2/Si interface by pulsed fibre laser radiation//Quantum Electronics, V. 47, pp. 503-508, 2017.
