CC BY
8ALT'22
LM-I-4
LASER-MATTER INTERACTION
Laser-Induced Forward Transfer of CVD Graphene for Electronic
Applications
Prokhorov General Physics Institute of the Russian Academy of Sciences, st. Vavilova 38, Moscow, 119991 Russia
Main author email address: komlenok@nsc.gpi.ru
The patterning and transfer of a graphene film without damaging its original structure is an urgent and difficult task for realizing the unique physical properties of a two-dimensional material in nanotechnology. For this purpose, we propose the use of the laser-induced forward transfer (LIFT), which has proven itself in the selective transfer of such delicate materials. The ease of implementation of laser techniques reduces the number of intermediate manipulations with a graphene film, increasing its safety. The work demonstrates the promise of LIFT of single-layer graphene from a metal surface to an arbitrary substrate at room temperature and in an ambient environment. The effect of the parameters of this method on the structure of transferred graphene islands is investigated. The relevance of reducing the distance between irradiating and receiving substrates for the transfer of free-lying graphene is demonstrated. The reasons for the damage to the integrity of the carbon film observed in the experiments are discussed. The preservation of the original crystal structure of transferred graphene under optimized conditions is confirmed by Raman spectroscopy. The proposed technique allows the formation of emitting crumpled graphene patterns without loss of the quality of initially synthesized graphene. Electron field emission properties of crumpled graphene imprints 1x1 mm2 in size are studied. The transferred graphene flakes demonstrate competitive adhesion and emission characteristics.
The research was funded by the Russian Science Foundation, grant number 18-72-10158.
M. Komlenok, N. Kurochitsky, P. Pivovarov, M. Rybin, E. Obraztsova, V. Konov
