Научная статья на тему 'INVESTIGATION OF DEGRADATION CHARACTERISTICS OF PHOTOSENSITIVE STRUCTURES WITH POROUS SILICON'

INVESTIGATION OF DEGRADATION CHARACTERISTICS OF PHOTOSENSITIVE STRUCTURES WITH POROUS SILICON Текст научной статьи по специальности «Электротехника, электронная техника, информационные технологии»

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Ключевые слова
PHOTOSENSITIVE STRUCTURES / POROUS SILICON / RADIATION RESISTANCE

Аннотация научной статьи по электротехнике, электронной технике, информационным технологиям, автор научной работы — Tishin P.D., Shishkina D.A., Shishkin I.A., Poluektova N.A., Latukhina N.V.

In this paper, the effect of porous silicon on the characteristics of photosensitive structures in open space is investigated. For this purpose, photovoltaic converters based on polished silicon of various configurations were created: a sample with a porous layer and a coating of zinc sulfide; a sample without a porous layer with a coating of zinc sulfide and a sample with a porous layer and a combined coating of zinc sulfide and dysprosium fluoride. The porous layer is less susceptible to environmental factors harmful to solar cells that reduce their service life, in particular, cosmic radiation. Also, porous surface contributes to higher electrical and optical properties of solar cells. And the antireflection coatings of zinc sulfide and dysprosium fluoride can reduce the number of recombination centers and increase light absorption, which also has a positive effect on the characteristics of structures. The results of the study of volt-ampere characteristics of silicon photosensitive devices are presented. An increase in the radiation resistance of structures using porous silicon is shown.

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Текст научной работы на тему «INVESTIGATION OF DEGRADATION CHARACTERISTICS OF PHOTOSENSITIVE STRUCTURES WITH POROUS SILICON»

i l St. Petersburg Polytechnic University Journal. Physics and Mathematics. 2022 Vol. 15, No. 3.3 Научно-технические ведомости СПбГПУ. Физико-математические науки. 15 (3.3) 2022

Conference materials UDC 004.942

DOI: https://doi.org/10.18721/JPM.153.315

Investigation of degradation characteristics of photosensitive structures with porous silicon

P. D. Tishin \ D. A. Shishkina ,H, I. A. Shishkin \ N. A. Poluektova ,, N. V. Latukhina 1

1 Samara National Research University, Samara, Russia H shishkina.da@ssau.ru

Abstract. In this paper, the effect of porous silicon on the characteristics of photosensitive structures in open space is investigated. For this purpose, photovoltaic converters based on polished silicon of various configurations were created: a sample with a porous layer and a coating of zinc sulfide; a sample without a porous layer with a coating of zinc sulfide and a sample with a porous layer and a combined coating of zinc sulfide and dysprosium fluoride. The porous layer is less susceptible to environmental factors harmful to solar cells that reduce their service life, in particular, cosmic radiation. Also, porous surface contributes to higher electrical and optical properties of solar cells. And the antireflection coatings of zinc sulfide and dysprosium fluoride can reduce the number of recombination centers and increase light absorption, which also has a positive effect on the characteristics of structures. The results of the study of volt-ampere characteristics of silicon photosensitive devices are presented. An increase in the radiation resistance of structures using porous silicon is shown.

Keywords: photosensitive structures, porous silicon, radiation resistance

Citation: Tishin P. D., Shishkina D. A., Shishkin I. A., Poluektova N. A., Latukhina N. V., Investigation of degradation characteristics of photosensitive structures with porous silicon, St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 15 (3.3) (2022) 82-85. DOI: https://doi.org/10.18721/JPM.153.315

This is an open access article under the CC BY-NC 4.0 license (https://creativecommons. org/licenses/by-nc/4.0/)

Материалы конференции УДК 004.942

DOI: https://doi.org/10.18721/JPM153.315

Исследование деградации характеристик фоточувствительных структур с пористым кремнием

П. Д. Тишин ,, Д. А. Шишкина, ,н, И. А. Шишкин ,, Н. А. Полуэктова ,, Н. В. Латухина 1

1 Самарский национальный исследовательский университет имени академика С.П. Королева, Самара, Россия

н shishkina.da@ssau.ru

Аннотация. В данной работе исследуется влияние наноструктурированного кремния на характеристики фоточувствительных структур в открытом космосе. Для этого были созданы солнечные элементы различной конфигурации: с пористым слоем и покрытием из сульфида цинка; без пористого слоя с покрытием из сульфида цинка; с пористым слоем и комбинированным покрытием из сульфида цинка и фторида диспрозия. Представлены результаты исследования вольт-амперных характеристик полученных структур. Показано увеличение радиационной стойкости пористых структур.

Ключевые слова: фоточувствительные структуры, пористый кремний, радиационная стойкость.

Ссылка при цитировании: Тишин П. Д., Шишкина Д. А., Шишкин И. А., Полуэктова Н. А., Латухина Н. В., Исследование деградации характеристик

© Tishin P. D., Shishkina D. A., Shishkin I. A., Poluektova N. A., Latukhina N. V., 2022. Published by Peter the Great St. Petersburg Polytechnic University.

фоточувствительных структур с пористым кремнием // Научно-технические ведомости СПбГПУ. Физико-математические науки. 2022. Т. 15. № 3.3. С. 82-85. DOI: https://doi. org/10.18721/JPM.153.315

Статья открытого доступа, распространяемая по лицензии CC BY-NC 4.0 (https:// creativecommons.org/licenses/by-nc/4.0/)

Introduction

Solar cells are a fairly promising option for a power source for space nanosatellites by many factors [1]. In particular, the rarefied atmosphere contributes to an increase in the service life of solar cells, and also contributes to an increase in the efficiency of such structures by 10-20% compared to terrestrial analogues. When choosing the substrate material for future photosensitive structures, preference is given to silicon because of its cheapness, as well as the width of its band gap, which contributes to greater generation of free charge carriers [2]. However, recent studies show that the use of porous silicon instead of a flat surface improves the characteristics of solar cells [3]. The porous surface is a pyramid, which reduces the reflection of sunlight and increases the radiation resistance of structures.

Materials and Methods

To prepare the flight experiment, 14 silicon samples with different surface types were taken on board the Aist-2D [4]. Phosphoric (и-type) and boric (p-type) diffusants were applied to the samples to create a p-n transition. Diffusion was carried out in a diffusion furnace at a temperature of 1000 °C for 40 minutes. Further, using electrochemical etching in a vertical cell [5]. The final stage of creating photosensitive structures is the application of titanium-palladium silver compound contacts and reflective coatings of zinc sulfide and dysprosium fluoride by thermal vacuum spraying on a magnetron sputtering unit.

Results and Discussion

Tests of the obtained silicon photosensitive structures were carried out on the Aist-2D small spacecraft directly in outer space, in order to investigate the radiation resistance of the obtained photoelectronic converters to cosmic radiation, as well as to mechanical and climatic influences.

For clarity, three samples were selected: a polished silicon wafer with pores and a ZnS coating (No. 1); a polished silicon wafer without pores with a ZnS coating (No. 3); a polished silicon wafer with pores and a combined ZnS+DyF3 coating (No. 10).

To construct the current-voltage characteristics (Fig. 1-3), the data obtained were processed in the MATLAB Simulink graphical programming environment.

Fig. 1. Current-voltage characteristics of solar cell No.1: ground tests (a); 02.10.2017 (b); 23.11.2017 (c);

11.01.2018 (d)

© Тишин П. Д., Шишкина Д. А., Шишкин И. А., Полуэктова Н. А., Латухина Н. В., 2022. Издатель: Санкт-Петербургский политехнический университет Петра Великого.

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St. Petersburg Polytechnic University Journal. Physics and Mathematics. 2022 Vol. 15, No. 3.3

Fig. 2. Current-voltage characteristics of solar cell No.3: ground tests (a); 02.10.2017 (b);

23.11.2017 (c); 11.01.2018 (d)

Fig. 3. Current-voltage characteristics ofsolar cell No.10: ground tests (a); 02.10.2017 (b); 23.11.2017 (c);

11.01.2018 (d)

From the graphs obtained, one can see the influence of radiation effects on the parameters of a solar cell with pores. The short-circuit current of solar cell No. 10 on 23.11.2017 increased to 0.3 A, and the open-circuit voltage decreased noticeably from 0.58 to 0.48 V. On solar cell No. 3, after radiation exposure, the current and voltage parameters decreased and further fluctuated near the marks of 0.2 A and 0.5 V. It can be concluded that solar cell No. 10 with a porous layer and a double coating has a higher short-circuit current compared to the others.

Conclusion

Thus, solar cells with silicon nanostructures and ZnS+DyF3 double coating are more radiation resistant compared to solar cells made according to classical technology and are promising for space applications.

REFERENCES

1. Nelson J. A., The physics of solar cells, World Scientific Publishing Company, 2003.

2. Yu, P., Wu, J., Liu, S., Xiong, J., Jagadish, C., Wang, Z. M., Design and fabrication of silicon nanowires towards efficient solar cells: Nano Today. 11 (6) (2016) 704—737.

3. Shishkina D. A., Poluektova N. A., Shishkin I. A., Photovoltaic characteristics of structures with porous silicon obtained by various technological plans, Journal of Physics: Conference Series: IOP Publishing. 2086 (1) (2021) 012102.

4. Gurtov A. S., Ivkov S. V., Lizunkova D. A., Shishkin I. A., Latukhina N. V., Operational characteristics of photovoltaic converters based on porous silicon, participating in the flight experiment on spacecraft "AIST-2D", XIV Korolev Readings: mater. International conf. (2017) 503.

5. Shishkin I. A., Lizunkova D. A., Latukhina N. V., The process of pore formation on a textured silicon substrate during electrochemical etching: a 3D model, Information Technologies and Nanotechnologies (2020) 27-30.

THE AUTHORS

TISHIN Pavel D. tishin.pavel1999@gmail.com ORCID: 0000-0002-9420-1852

POLUEKTOVA Natalia A.

natapolivekt37@gmail.com ORCID: 0000-0003-4189-6192

SHISHKINA Daria A. daria.lizunkova@yandex.ru ORCID: 0000-0003-4118-1429

LATUKHINA Natalia V.

natalat@yandex.ru ORCID: 0000-0003-2651-056

SHISHKIN Ivan A.

shishkinivan9@gmail.com ORCID: 0000-0002-8413-9661

Received 25.07.2022. Approved after reviewing 26.07.2022. Accepted 26.07.2022.

© Peter the Great St. Petersburg Polytechnic University, 2022

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