Научная статья на тему 'Inhomogeneous broadening in the luminescence spectra of single SnV and GeV centers in CVD diamonds at cryogenic temperatures'

Inhomogeneous broadening in the luminescence spectra of single SnV and GeV centers in CVD diamonds at cryogenic temperatures Текст научной статьи по специальности «Биологические науки»

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Текст научной работы на тему «Inhomogeneous broadening in the luminescence spectra of single SnV and GeV centers in CVD diamonds at cryogenic temperatures»

Inhomogeneous broadening in the luminescence spectra of single SnV and GeV centers in CVD diamonds at cryogenic

temperatures

M. Pavlenko1,2*, A. Neliubov3, I. Eremchev1,4, V. Sedov5, A. Martyanov5, V. Ralchenko5, A. Naumov14

1-Moscow Pedagogical State University, Malaya Pirogovskaya str. 1/1, Moscow, 119435, Russia 2- National Research University Higher School of Economics, Staraya Basmannaya str. 21/4, 109028, Moscow,

Russia

3- Center for Engineering Physics, Skolkovo Institute Science and Technology, Nobel str. 1, Moscow

121205, Russia

4- Institute of Spectroscopy RAS, Troitsk, Fizicheskaya str. 5, Moscow 108840, Russia 5- Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov str. 38, Moscow 119991,

Russia

* [email protected]

This paper presents a low temperature study of the spectral properties of tin-vacancy (SnV) and germanium-vacancy (GeV) color centers in diamonds synthesized by plasma chemical deposition from the gas phase (CVD). In experiments with SnV centers at T = 7 K, a large spread of narrow zero-phonon lines (ZPL) in the range of 615-630 nm was observed, while the full width at half maximum (FWHM) was about 0.05 nm (Fig. 1(a)) [1]. In the obtained photoluminescence spectra of the sample with GeV centers at T = 8 K narrow lines were observed, the FWHM of which was limited by the resolution of the spectrometer (~ 0.028 nm). The line spread of the ensemble was in the range of 600-608 nm (Fig. 1(b)). The observed shifts of the ZPL are explained by the stresses of the crystal lattice formed during the growth of the diamond. The variation in spectral positions can be attributed to the difference in individual microcrystal stresses. The effect of diamond crystal lattice stresses on the spectral position of the ZPL of impurity center has already been observed for GeV and SiV centers. The detected lines at cryogenic temperatures correspond to the luminescence of small ensembles (up to single emitters) of color centers, which is confirmed by the observation of spectral diffusion, blinking and linear polarization of the radiation of individual ZPL.

Fig. 1. (a) Spectra of PL SnV centers; (b) Spectra of PL GeV centers.

[1] V. Sedov, A. Martyanov, et al, Narrowband Photoluminescence of Tin-Vacancy Colour Centres in Sn-Doped Chemical Vapour Deposition Diamond Microcrystals, Phil. Trans. R. Soc. A 382: 20230167 (2023).

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