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5Focused ion beam as a tool for prototyping new designs of
semiconductor lasers
Vadim Evtikhiev1,2, M.I. Mitrofanov1, G.V. Voznyuk1,2
1-Ioffe Institute, St. Petersburg, 194021, Russia 2- ITMO University, 197101, Russia [email protected]
Developing new designs of semiconductor lasers often necessary to use optical elements that require the use of submicron lithography for fabrication. Unfortunately, standard DUV lithography at the prototyping stage is unreasonably expensive. Moreover, when studying the influence of the device design on the optical characteristics, especially at the stage of test samples, it is convenient to use ready-made device with a standard parameters and make changes to it. In this case, it is impossible to apply lithographic methods requiring the use of a resist. For solving above-mentioned problems, the method of direct lithography with a focused ion beam (FIB) is well suited. It allows forming a lithographic pattern with nanometer resolution in both metallic (contact) layer and semiconductor heterostructure without the use of masks. FIB is widely used in the semiconductor industry and in the laboratories of research groups for the preparation of samples for transmission electron microscopes, local inspection of integrated circuits, prototyping passive photonic elements and MEMS [1]. The disadvantage of the method for the nanophotonic applications is the formation of radiation defects (vacancies, interstitial atoms and their complexes) and surface amorphisation in the semiconductor structure under the action of high-energy ions. Radiation defects create deep levels in the band gap of the semiconductor, which leads to a decrease in the internal quantum yield of the luminescence. To overcome the problem we investigate the influence of high-energy Ga+ ions on the formation of radiation defects in III/V heterostructures [2]. As a result, we demonstrate the application of direct focused ion beam lithography to realize various designs of optical elements for the modification optical parameters of different types of semiconductor lasers - distributed Bragg reflectors to the designing of single-mode quantum-cascade lasers (QCL) [3]; subwavelength textured layers to implement the emission of radiation through the surface in ring resonator (QCL) [4]; second order grating on top (QCL) ring cavity for mode selection [5]; laser diodes with splitted Fabry-Perot resonator for spectral mode tuning [6].
This research is supported by the Russian Science Foundation grant No. 21-12-00304.
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[2] G.V. Voznyuk, I.N. Grigorenko, A.S. Lila, M.I. Mitrofanov, D.N. Nikolaev, V.P. Evtikhiev On the effect of etching with a focused Ga+ ion beam in the energy range 12-30 keV on the luminescent properties of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As heterostructure. Semiconductors, 2022, vol. 56, No. 12, pp. 894-897, (2022).
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[6] A. S. Payusov, M. I. Mitrofanov, G. O. Kornyshov, A. A. Serin, G. V. Voznyuk, M. M. Kulagina, V. P. Evtikhiev, N. Yu. Gordeev, M. V. Maksimov, S. Breuer, Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers, Technical Physics Letters, vol. 47, No. 24, pp. 51-54, (2021).
