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Секция «Актуальные на учные проблемы в мире (глазами молодьх исследователей)»
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FIELD EFFECT TRANSISTORS, THEIR SHORT REVIEW AND APPLICATION
M. (A.) Kurzenev Scientific supervisor - E. (N.) Sukharev Foreign language supervisor - O. (V.) Karchava
Reshetnev Siberian State Aerospace University 31, Krasnoyarsky Rabochy Av., Krasnoyarsk, 660037, Russian Federation E-mail: kurzenev1995@mail.ru
The article dwells on the field effect transistors. This article observes the classification of these devices, their functions, and their principle of operation. In this article the advantages of field effect transistors and their comparison analysis are considered in a brief form.
Keywords: field effect transistors, voltage, inductive channel.
ПОЛЕВЫЕ ТРАНЗИСТОРЫ, ИХ КРАТКИЙ ОБЗОР И ПРИМЕНЕНИЕ
М. А. Курзенев Научный руководитель - Е. Н. Сухарев Руководитель по иностранному языку - О. В. Карчава
Сибирский государственный аэрокосмический университет имени академика М. Ф. Решетнева
Российская Федерация, 660037, г. Красноярск, просп. им. газ. «Красноярский рабочий», 31
E-mail: kurzenev1995@mail.ru
Рассмотрены полевые транзисторы. Рассмотрены типы полевых транзисторов, назначение, а также их принцип работы. Рассмотрены подтипы полевых транзисторов и их сравнительный анализ в краткой форме.
Ключевые слова: полевые транзисторы, напряжение, индукционный канал.
Field-effect (unipolar) transistor (FET) - a semiconductor transforming device in which current is controlled by electric field arising of application voltage between lock and source. This device is used for amplifying power of electric oscillations. It doesn't consume current practically. FET consists of a gate, a source and a drain. The gate is a separated device.
There are two main types of field effect transistor: the junction field effect transistor (JFET) and the insulated-gate field effect transistor (IGFET), which is more commonly known as the standard metal oxide semiconductor field effect transistor - MOSFET. Let us consider them in detail.
The first type of FET is a JFET. In that electronic device voltage is applied with polarity on a gate for closing p-n junction. The width of the depletion region increases and the depletion region blocks the source-drain channel.
The second type of FET is a MOSFET (IGFET). It has a gate, separated from the channel with a dielectric layer. MOSFET changes a conductivity of a surface layer of semiconductor on a border of a dielectric on influence of electric field between gate and source.
There are two types of MOSFET.
The first type is a MOSFET with an isolated gate. Voltage is applied with such polarity for attraction electrons to a gate. Homogenous domain of n-type appears. Conductivity of the channel can be increased or decreased by changing voltage on the gate. The control of transistor's current can be realized only with voltage positive polarity.
The second type is a MOSFET with an inductive channel. A weakly-doped channel with conductivity of n-type and with conductivity of substrate p-type creates a diffusion between source and drain. If electric field is negative, the concentration of charge flows in a channel decreases and the depletion region becomes wider. The resistance is increased and current is decreased between source and drain. If electric field is
Актуальные проблемы авиации и космонавтики - 2015. Том 2
positive, an additional negative carries is induced, the conductivity of the channel increases and the drain's current grows.
Also there is one more type of MOSFET which is called the floating-gate MOSFET (FGMOS). FGMOS is a field-effect transistor the structure of which is similar to a conventional MOSFET. The gate of the FGMOS is electrically isolated, a number of secondary gates or inputs is deposited above the floating gate (FG) and is electrically isolated from it.
Floating-gate MOSFET is a basis of electronic memory devices.
Field effect transistors are widely used in digital integrated circuits and devices.
© Kurzenev M. (A.), 2015
