ЭЛЕКТРОННЫЕ СВОЙСТВА ВАН-ДЕР-ВААЛЬСОВЫХ ГЕТЕРОСТРУКТУР С РЕЛАКСИРОВАННОЙ СВЕРХРЕШЕТКОЙ МУАРА Текст научной статьи по специальности «Физика»

ЭЛЕКТРОННЫЕ СВОЙСТВА ВАН-ДЕР-ВААЛЬСОВЫХ ГЕТЕРОСТРУКТУР С РЕЛАКСИРОВАННОЙ СВЕРХРЕШЕТКОЙ МУАРА

Еналдиев В. В. 1,2

Московский физико-технический институт, Долгопрудный, Россия, E-mail: vo-

va.enaldiev@gmail.com 2Институт радиотехники и электроники им. В.А. Котельникова РАН, Москва, Россия

Moiré superlattice, formed at twisted interface of two-dimensional materials, can dramatically change electronic properties of constituent layers due to stacking dependent modulation of interlayer hybridization of states. In long-period moiré superlattice, characteristic for small-angle-twisted bilayers, the areas of energetically preferential stacking expand into mesoscale domains, embedded into a domain wall network [1,2]. In my talk I discuss several examples of the twistronic heterostructures with relaxed moiré superlattice demonstrating experimental results supplemented by theoretical modelling. In particular, I show how relaxation of moiré pattern results in an interfacial ferroelectricity in small-angle twisted transition metal dichalcogenide bi-layers [3] and demonstrate properties of tunnel junctions based on the interfacial ferroelectrics [4]. In addition, I show that a single dislocation in relaxed moiré superlattice of small-angle-twisted bilayer graphene form a robust one-dimensional channel for dissipationless supercurrent in Josephson junction in quantum Hall regime [5].

Литература

1. V.V. Enaldiev, V. Zolyomi, C. Yelgel et al // Phys. Rev. Letters - 2020. - V. 124 С. -206101.

2. A. Weston, Y. Zou, V. Enaldiev et al // Nature Nanotechnology. - 2020. - Т. 15. - С. 592.

3. A. Weston, E.G. Castanon, V. Enaldiev et al // Nature Nanotechnology. - 2022. - Т. 17. -С. 390.

4. Y. Gao, A. Weston, V. Enaldiev et al // arXiv:2403.09399. - (2024).

5. J. Barrier, M. Kim, R.K. Kumar et al // Nature. - 2024.- Т. 628. - С. 741.