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10LM-PS-12
Electron dynamic near silicon surface irradiated by ultrashort laser pulse
D. Polyakov1, E. Yakovlev1
1ITMO University, Faculty of Laser Photonics and Optoelectronics, Saint-Peterburg, Russian Federation
The problem of electron emission from solid surfaces induced by the action of ultrashort laser pulses has attracted the attention of researchers since the seventies of the last century. One can point out on several phenomena that can be associated with ultrafast electron emission: «Coulomb explosion» [1], creation of dynamic waveguide related with the depletion of surface layers of semiconductor by electrons [2]. Howevere, the role of electron emission in the general picture of the interaction of femtosecond laser pulses with solids remains unclear despite a significant amount of experimental and theoretical work. One of the main problems of the existing theoretical descriptions of electron emission from semiconductor or dielectric materials is neglecting the influence of self-consistent electrical field on electron transport near solid/vacuum interface (space charge effect).
In this work we present a theoretical model that takes into account the influence of space charge effects on ultrafast electron dynamics near solid/vacuum interface. In the framework of presented model the possibility of related with emission phenomena (such as «Coulomb explosion», creation of dynamic waveguide) were analyzed for silicon. In addition, we make suggestion that the time-depending dipole moment induced by the emission separation of charges should lead to the generation of electromagnetic radiation from the terahertz frequency range. The properties of such radiation were investigated.
This work was supported by RFBR Grant #18-32-00839.
References
[1] N.M. Bulgakova, R. Stoian, A. Rosenfeld, I.V. Hertel, E.E.B. Campbell. Phys. Rev. B 69 (2004) 054102.
[2] G.A. Martsinovskii, G.D. Shandybina, D.S. Smirnov, S.V. Zabotnov, L.A. Golovan, V.Yu. Timoshenko, P.K. Kashkarov. Opt. Spectrosc. 105 (2008) 67.
