CC BY
9HiLASE-O-1
Effect of phase shift, polarisation vector orientation and incident angle shift on multiple beam interference pattern.
D. Jochcova1,2, J. Kaufman1'2, P. Hauschwitz1,2, J. Vanda1, J. Brajer1, D. Rostohar1, T. Mocek1 1HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Dolni Brezany, Czech Republic
2Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, Prague, Czech Republic
Nanostructuring and microstructuring approaches such as Electron Beam Litography or Nanoimprint Litography, frequently used in microelectronics manufacturing, require considerable amount of time. In order to reduce processing time, laser patterning methods based on interference of multiple beams have been developed. Within one laser pulse, significant part of an irradiated area on a sample surface is patterned with desired micro or submicrostructures. Nowadays, interference patterning is not limited just to periodic lines and dots. Controlling of number of interfering beams, orientation of polarisation vectors, relative phase shift and incident angle of beams allows to customize an intensity distribution in an interference field even more. Simulations of various interference patterns were generated and some of them were observed via CCD.
