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2Development of high performance photodetectors based on porous Si-2D materials heterostructures
N. Tripathi
Samara National Research University, 34, Moskovskoye Shosse, Samara, 443086, Russia
tripati.n@ssau.ru, nishant.tripathi.11@gmail.com
The present study explores two contemporary topics: the creation of high-performance self-powered photodetectors, and the synthesis of heterostructures between transition metal chalcogenides (TMCs) and other promising materials like porous silicon (P-Si) or silicon nanowires for the aforementioned photodetectors. The fundamental mechanisms for photodetection and photocatalysis are largely similar, indicating that the proposed heterostructures will be beneficial not only for the photodetectors discussed but also for future photocatalysis reactions and other light energy harvesting applications.
Currently, the development of highly sensitive and self-powered photodetectors is both relevant and innovative [1,2]. Self-powered photodetectors, which operate without an external power supply, represent a new class of photodetectors [3]. The key to achieving self-powered functionality in a photodetector is the photovoltaic effect, typically occurring in photodiodes with a heterostructure [4]. For instance, in a p-n junction, the gradient in charge carrier concentration leads to the movement of holes and electrons, forming a built-in electric field. When this junction is exposed to light, electron-hole pairs are separated by the built-in electric field at the junction interface, moving to the external circuit connected to this heterostructure [4]. Notably, self-powered photodetectors exhibit minimal dark current, significantly enhancing photodetection efficiency [5].
To develop highly sensitive self-powered photodetectors, researchers are combining various materials to achieve optimal photodetection performance. Porous silicon (P-Si) has garnered considerable attention for use in optoelectronic devices, especially following the discovery of its effective visible photoluminescence and electroluminescence [6,7]. P-Si boasts a broad modulated direct energy band gap, a single-crystal structure compatible with bulk silicon [8], high resistivity, diverse structures (micro-, meso-, and macro-structures) with a large surface area to volume ratio [9,10], a cost-effective and simple fabrication process, and compatibility with modern silicon microelectronic manufacturing processes [11]. These advantages make P-Si an excellent candidate for photodetectors [12].
[1] D. Wu, J. Guo, J. Du, C. Xia, L. Zeng, Y. Tian, Z. Shi, Y. Tian, X.J. Li, Y.H. Tsang, J. Jieet, Highly polarization-sensitive, broadband, self-powered photodetector based on graphene/PdSe2/germanium heterojunction, ACS nano 13 (9) (2019) 9907-9917.
[2] Y. Xin, X. Wang, Z. Chen, D. Weller, Y. Wang, L. Shi, X. Ma, C. Ding, W. Li, S. Guo, R. Liu, Polarization-sensitive self-powered type-II GeSe/MoS2 van der Waals heterojunction photodetector, ACS Applied Materials & Interfaces 12 (13) (2020) 15406-15413.
[3] H. Qiao, Z. Huang, X. Ren, S. Liu, Y. Zhang, X. Qi, H. Zhang, Self-powered photodetectors based on 2D materials, Adv. Optical Mater. (2019) 1900765.
[4] J. Jiang, Y. Wen, H. Wang, L. Yin, R. Cheng, C. Liu, L. Feng, J. He, Recent Advances in 2D Materials for Photodetectors, Adv. Electron. Mater. 7 (2021) 2001125.
[5] S. Kim, M. Kim, H. Kim, Self-powered photodetectors based on two-dimensional van der Waals semiconductors, Nano Energy 127 (2024) 109725.
[6] L. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl Phys Lett 57 (1990)1046-1048.
[7] N. Koshida, H. Koyama, Visible electroluminescence from porous silicon, Appl Phys Lett 60 (1992) 347-349.
[8] M.-K. Lee, C.-H. Chu, Y.-H. Wang, S. Sze, 1.55-^m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector, Opt. Lett. 26 (2001) 160-162.
[9] P. Fauchet, J. Von Behren, K. Hirschman, L. Tsybeskov, S. Duttagupta, Porous silicon physics and device applications: a status report, Phys Status Solidi (A) 165 (1998) 3-13.
[10] R. Herino, G. Bomchil, K. Barla, C. Bertrand, J. Ginoux, Porosity and pore size distributions of porous silicon layers, J Electrochem Soc 134(1987)1994-2000.
[11] H.A. Lopez, Porous silicon nanocomposites for optoelectronic and telecommunication applications in University of Rochester (2001).
[12] H. Hadi, R. Ismail, N. Habubi, Optoelectronic properties of porous silicon heterojunction photodetector, Indian J. Phys. 88 (2014) 5963.
