Научная статья на тему 'Deposition of oxide nanostructures by nanosecond laser ablation of silicon in oxygen- containing background gas'

Deposition of oxide nanostructures by nanosecond laser ablation of silicon in oxygen- containing background gas Текст научной статьи по специальности «Физика»

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Текст научной работы на тему «Deposition of oxide nanostructures by nanosecond laser ablation of silicon in oxygen- containing background gas»

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Deposition of oxide nanostructures by nanosecond laser ablation of silicon in oxygen-containing background gas

A. Rodionov1,2, S. Starinskiy1,2, Y. Shukhov2, A. Bulgakov2'3, E. Maksimovskiy4, V. Sulyaeva4 Novosibirsk State University, physical department, Novosibirsk, Russian Federation 2Institute of Thermophysics, Sb RAS, Novosibirsk, Russian Federation

3HiLASE Centre, Institute of Physics of the Czech Academy of Sciences, Dolni Brezany, Czech Republic

4Institute of Inorganic Chemistry, Sb RAS, Novosibirsk, Russian Federation

Silicon and silicon-based nanostructures are widely used in field of creation protective and insulate coatings, photovoltaic and development new optical elements. One of the promising methods for the synthesis of silicon nanostructures is pulsed laser ablation. Today, the question about the interaction of ablation products and background environment has not been studied enough. In this work, we studied the composition of thin films synthesized by ablation of silicon in background argon, oxygen, air and their mixture at various pressures. Irradiation was carried out by the Nd:YAG laser with a wavelength of 532 nm and a pulse duration of 8 ns. SEM analysis showed that the films obtained at identical background pressure, but different oxygen concentrations, have a similar morphology. The oxidation state of the films was determined by using FTIR, EDX, XPS analysis methods. The results obtained using various techniques are in good agreement with each other. The oxidation state of the films increase with increase in the pressure of background Ar-O2 mixture from 20 to 60 Pa, at a constant oxygen partial pressure 0.5 Pa. The films is uniformly oxidized at a background mixture of argon and oxygen with pressure of 60 Pa, regardless of oxygen content in range 2-100%. We assume that this is due to a change in the type of interaction between the gas and laser plume. Also observed uneven spatial oxidation of films. We assume that the uneven oxidation of the film is associated with the heterogeneous oxidation of the laser plume. As a result, oxygen-rich regions are formed on the substrate.

This work was financed by the partial support of a grant of the President of Russian Federation (MK-2404.2019.8, samples obtaining). The study of samples properties was carried out under state contract with IT SB RAS (AAAA-A17-117022850025-1).

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